- 您现在的位置：买卖IC网 > Sheet目录503 > RJK0230DPA-00#J5A (Renesas Electronics America)MOSFET DL N-CH 25V 20A WPAK
RJK0230DPA
Static Drain to Source On State Resistance
vs. Temperature
20
Pulse Test
10000
Typical Capacitance vs.
Drain to Source Voltage
Preliminary
16
I D = 2 A, 5 A, 10 A
3000
12
1000
Ciss
8
V GS = 4.5 V
300
100
Coss
4
10 V
2 A, 5 A, 10 A
30
V GS = 0
Crss
0
10
f = 1 MHz
–25
0
25
50
75
100 125 150
0
10
20
25
Case Temperature Tc (°C)
Dynamic Input Characteristics
Drain to Source Voltage V DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
I D = 20 A
V DD = 20 V
V GS
20
16
50
40
10 V
5V
Pulse Test
10 V
30
20
V DS
12
8
30
20
10
V DD = 20 V
4
10
V GS = 0, –5 V
10 V
0
0
6
12
18
24
0
30
0
0.4
0.8
1.2
1.6
2.0
20
16
12
8
4
0
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V SD (V)
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0541EJ0110 Rev.1.10
Sep 12, 2011
Page 5 of 10
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
RJK0353DSP-00#J0
MOSFET N-CH 30V 18A 8-SOP
RJK03E0DNS-00#J5
MOSFET N-CH 30V 30A 8-HWSON
RJK03E2DNS-00#J5
MOSFET N-CH 30V 16A 8-HWSON
RJK6025DPD-00#J2
MOSFET N CH 600V 1A MP3A
RJP020N06T100
MOSFET N-CH 60V 2A SOT-89
RL3004-6.56-59-D1
THERMISTOR NTC 10 OHM @ 25C
RL4504-3.28-59-D1
THERMISTOR NTC 5 OHM @ 25C
RMW130N03TB
MOSF N CH 30V 13A PSOP8
相关代理商/技术参数
RJK0234DNS
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:25V, 35A, 5.8m??max. N Channel Power MOS FET High Speed Power Switching
RJK0236DPA
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Built in SBD N Channel Power MOS FET High Speed Power Switching
RJK0236DPA-00-J5A
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Built in SBD N Channel Power MOS FET High Speed Power Switching
RJK0243DNS
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N Channel Power MOS FET High Speed Power Switching
RJK0243DNS-00-J5
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N Channel Power MOS FET High Speed Power Switching
RJK0301DPB
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching
RJK0301DPB-00#J0
功能描述:MOSFET N-CH 30V 60A 5-LFPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
RJK0301DPB-00-J0
制造商:Renesas Electronics Corporation 功能描述:
